The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Jun. 03, 2009
Patrick W. Dehaven, Hopewell Junction, NY (US);
Daniel C. Edelstein, Yorktown Heights, NY (US);
Philip L. Flaitz, Hopewell Junction, NY (US);
Takeshi Nogami, Albany, NY (US);
Stephen M. Rossnagel, Yorktown Heights, NY (US);
Chih-chao Yang, Hopewell Junction, NY (US);
Patrick W. DeHaven, Hopewell Junction, NY (US);
Daniel C. Edelstein, Yorktown Heights, NY (US);
Philip L. Flaitz, Hopewell Junction, NY (US);
Takeshi Nogami, Albany, NY (US);
Stephen M. Rossnagel, Yorktown Heights, NY (US);
Chih-Chao Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a diffusion barrier for use in semiconductor device manufacturing includes depositing, by a physical vapor deposition (PVD) process, an iridium doped, tantalum based barrier layer over a patterned interlevel dielectric (ILD) layer, wherein the barrier layer is deposited with an iridium concentration of at least 60 atomic % such that the barrier layer has a resulting amorphous structure.