The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2011

Filed:

Aug. 23, 2010
Applicants:

Claude L. Bertin, Venice, FL (US);

Mitchell Meinhold, Arlington, MA (US);

Steven L. Konsek, Boston, MA (US);

Thomas Rueckes, Rockport, MA (US);

Max Strasburg, Gresham, OR (US);

Frank Guo, Danville, CA (US);

X. M. Henry Huang, Cupertino, CA (US);

Ramesh Sivarajan, Shrewsbury, MA (US);

Inventors:

Claude L. Bertin, Venice, FL (US);

Mitchell Meinhold, Arlington, MA (US);

Steven L. Konsek, Boston, MA (US);

Thomas Rueckes, Rockport, MA (US);

Max Strasburg, Gresham, OR (US);

Frank Guo, Danville, CA (US);

X. M. Henry Huang, Cupertino, CA (US);

Ramesh Sivarajan, Shrewsbury, MA (US);

Assignee:

Nantero, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 5/00 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.


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