The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Jun. 04, 2009
Luciana Capello, Grenoble, FR;
Oleg Kononchuk, Theys, FR;
Eric Neyret, Sassenage, FR;
Alexandra Abbadie, Le Versoud, FR;
Walter Schwarzenbach, Saint Nazaire Eymes, FR;
Luciana Capello, Grenoble, FR;
Oleg Kononchuk, Theys, FR;
Eric Neyret, Sassenage, FR;
Alexandra Abbadie, Le Versoud, FR;
Walter Schwarzenbach, Saint Nazaire Eymes, FR;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a method for fabricating a semiconductor on insulator substrate, in particular a silicon on insulator substrate by providing a source substrate, providing a predetermined splitting area inside the source substrate by implanting atomic species, bonding the source substrate to a handle substrate, detaching a remainder of the source substrate from the source-handle component at the predetermined splitting area to thereby transfer a device layer of the source substrate onto the handle substrate, and thinning of the device layer. To obtain semiconductor on insulator substrates with a reduced Secco defect density of less than 100 per cmthe implanting is carried out with a dose of less than 2.3×10atoms per cmand the thinning is an oxidation step conducted at a temperature of less than 925° C.