The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2011
Filed:
Jun. 30, 2008
Anton Mauder, Kolbermoor, DE;
Frank Pfirsch, Munich, DE;
Rudolf Berger, Regensburg, DE;
Stefan Sedlmaier, Munich, DE;
Wolfgang Lehnert, Lintach, DE;
Raimund Foerg, Straubing, DE;
Anton Mauder, Kolbermoor, DE;
Frank Pfirsch, Munich, DE;
Rudolf Berger, Regensburg, DE;
Stefan Sedlmaier, Munich, DE;
Wolfgang Lehnert, Lintach, DE;
Raimund Foerg, Straubing, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.