The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jul. 20, 2007
Noriyuki Kobayashi, Yamanashi, JP;
Kenji Adachi, Hsin-chu, TW;
Noriyuki Kobayashi, Yamanashi, JP;
Kenji Adachi, Hsin-chu, TW;
Tokyo Electrons Limited, Tokyo, JP;
Abstract
Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for 5 gate formed on silicon substrate is etched by introducing a processing gas including a gaseous mixture containing at least CF, Ar, Oand Ninto an airtight processing chamber and carrying out a plasma treatment in a self-alignment contact process, thereby forming contact hole. For the 10 processing gas, e.g., the ratio of Ngas flow rate to CFgas flow rate ranges from 25/8 to 85/8, the ratio of Oand Ngas flow rate to CFgas flow rate ranges from 15/4 to 45/4 and the ratio of Ngas flow rate to Ogas flow rate ranges from 5 to 17. Accordingly, stable contact holes of 15 high aspect ratio exhibiting desirable control characteristics is formed while minimizing etching the silicon nitride film, a protective film layer for gate.