The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jan. 18, 2008
Huilong Zhu, Poughkeepsie, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Yanfeng Wang, Fishkill, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of producing a semiconducting device is provided that in one embodiment includes providing a semiconducting device including a gate structure atop a substrate, the gate structure including a dual gate conductor including an upper gate conductor and a lower gate conductor, wherein at least the lower gate conductor includes a silicon containing material; removing the upper gate conductor selective to the lower gate conductor; depositing a metal on at least the lower gate conductor; and producing a silicide from the metal and the lower gate conductor. In another embodiment, the inventive method includes a metal as the lower gate conductor.