The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Apr. 02, 2007
Hak-seung Han, Yongin-si, KR;
Seong-woon Choi, Suwon-si, KR;
Byung-gook Kim, Suwon-si, KR;
Hee-bom Kim, Suwon-si, KR;
Sung-ho Park, Seoul, KR;
Hak-seung Han, Yongin-si, KR;
Seong-woon Choi, Suwon-si, KR;
Byung-gook Kim, Suwon-si, KR;
Hee-bom Kim, Suwon-si, KR;
Sung-ho Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.