The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

May. 22, 2008
Applicants:

Rinat Shimshi, San Jose, CA (US);

Youval Nehmadi, Sunnyvale, CA (US);

Vicky Svidenko, San Jose, CA (US);

Alexander T. Schwarm, Austin, TX (US);

Sundar Jawaharlal, Glen Allen, VA (US);

Inventors:

Rinat Shimshi, San Jose, CA (US);

Youval Nehmadi, Sunnyvale, CA (US);

Vicky Svidenko, San Jose, CA (US);

Alexander T. Schwarm, Austin, TX (US);

Sundar Jawaharlal, Glen Allen, VA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 19/00 (2006.01); G06F 17/50 (2006.01); H01L 21/66 (2006.01); G06K 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one embodiment, a method for predicting yield includes calculating a criticality factor (CF) for each of a plurality of defects detected in an inspection process step of a wafer, and determining a yield-loss contribution of the inspection process step to the final yield based on CFs of the plurality of defects and the yield model built for a relevant design. The yield-loss contribution of the inspection process step is then used to predict the final yield for the wafer.


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