The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2011

Filed:

Jan. 13, 2009
Applicants:

Henry F. Huang, Apple Valley, MN (US);

Andrew J. Carter, Minneapolis, MN (US);

Maroun Khoury, Burnsville, MN (US);

Yong LU, Edina, MN (US);

Yiran Chen, Eden Prairie, MN (US);

Inventors:

Henry F. Huang, Apple Valley, MN (US);

Andrew J. Carter, Minneapolis, MN (US);

Maroun Khoury, Burnsville, MN (US);

Yong Lu, Edina, MN (US);

Yiran Chen, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method and apparatus for reading data from a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, at least a first and second memory cell are read for a plurality of resistance values that are used to select and store a voltage reference for each memory cell.


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