The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Apr. 14, 2008
Ki-ha Hong, Seoul, KR;
Sung-hoon Lee, Yongin-si, KR;
Jong-seob Kim, Suwon-si, KR;
Jai Kwang Shin, Anyang-si, KR;
Ki-ha Hong, Seoul, KR;
Sung-hoon Lee, Yongin-si, KR;
Jong-seob Kim, Suwon-si, KR;
Jai Kwang Shin, Anyang-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO), magnetite (FeO), a double perovskite structure material, a Heusler alloy, NiMnSb, LaAMnO(A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of ABB'O, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.