The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Aug. 15, 2006
Jonathan England, Horsham, GB;
Steven R. Walther, Andover, MA (US);
Richard S. Muka, Topsfield, MA (US);
Julian Blake, Gloucester, MA (US);
Paul J. Murphy, Reading, MA (US);
Reuel B. Liebert, Peabody, MA (US);
Jonathan England, Horsham, GB;
Steven R. Walther, Andover, MA (US);
Richard S. Muka, Topsfield, MA (US);
Julian Blake, Gloucester, MA (US);
Paul J. Murphy, Reading, MA (US);
Reuel B. Liebert, Peabody, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.