The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Nov. 06, 2007
Applicants:
Wei Hua Tong, Singapore, SG;
Lap Chan, Singapore, SG;
K. Suresh Kumar, Singapore, SG;
Miow Chin Tan, Singapore, SG;
Inventors:
Wei Hua Tong, Singapore, SG;
Lap Chan, Singapore, SG;
K. Suresh Kumar, Singapore, SG;
Miow Chin Tan, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces defects which enhances diffusion of metal atoms or molecules.