The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
May. 29, 2007
Applicants:
Lap-wai Chow, South Pasadena, CA (US);
William M. Clark, Jr., Camarillo, CA (US);
Gavin J. Harbison, Marina del Rey, CA (US);
Paul Ou Yang, San Jose, CA (US);
Inventors:
Lap-Wai Chow, South Pasadena, CA (US);
William M. Clark, Jr., Camarillo, CA (US);
Gavin J. Harbison, Marina del Rey, CA (US);
Paul Ou Yang, San Jose, CA (US);
Assignees:
HRL Laboratories, LLC, Malibu, CA (US);
Raytheon Corporation, Lexington, MA (US);
Promtek, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.