The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jun. 28, 2005
Hongmei Wang, Boise, ID (US);
Fred D. Fishburn, Boise, ID (US);
Janos Fucsko, Boise, ID (US);
T. Earl Allen, Kuna, ID (US);
Richard H. Lane, Boise, ID (US);
Robert J. Hanson, Boise, ID (US);
Kevin R. Shea, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Fred D. Fishburn, Boise, ID (US);
Janos Fucsko, Boise, ID (US);
T. Earl Allen, Kuna, ID (US);
Richard H. Lane, Boise, ID (US);
Robert J. Hanson, Boise, ID (US);
Kevin R. Shea, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.