The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Jun. 29, 2007
Toshiharu Furukawa, Essex Junction, VT (US);
John G. Gaudiello, Waterford, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles William Koburger, Iii, Delmar, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
John G. Gaudiello, Waterford, NY (US);
Mark Charles Hakey, Fairfax, VT (US);
Steven J. Holmes, Guilderland, NY (US);
David V. Horak, Essex Junction, VT (US);
Charles William Koburger, III, Delmar, NY (US);
Chung Hon Lam, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is formed on the lower electrode feature and has one or more sidewalls. It comprises a lower doped feature, a middle doped feature formed above the lower doped feature, and an upper doped feature formed above the middle doped feature. The sacrificial feature is formed above the island, while the gate feature is formed along each sidewall of the island. The gate feature overlies at least a portion of the middle doped feature of the island and is operative to control an electrical resistance therein. Finally, the phase feature is formed above the island at least in part by replacing at least a portion of the sacrificial feature with a phase change material. The phase change material is operative to switch between lower and higher electrical resistance states in response to an application of an electrical signal.