Method of double patterning a thin film using a developable anti-reflective coating and a developable organic planarization layer

Abstract

A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an organic planarization layer (OPL) on the thin film, forming an anti-reflective coating (ARC) layer on the OPL, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a first pattern and a second pattern therein, and the first and second patterns are transferred to the ARC layer and partially or fully transferred to the OPL using a transfer process, such as an imaging and developing process. During a partial pattern transfer to the OPL, the mask layer is removed and the first pattern and second patterns are completely transferred to the OPL using an etching process. Thereafter, the first and second patterns in the OPL are transferred to the underlying thin film using another etching process.