The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Apr. 15, 2008
Chih-wen (Albert) Yao, Hsin-Chu, TW;
Puo-yu Chiang, Su-ao Township, TW;
Tsai Chun Lin, Hsin-Chu, TW;
Tsung-yi Huang, Hsin-Chu, TW;
Chih-Wen (Albert) Yao, Hsin-Chu, TW;
Puo-Yu Chiang, Su-ao Township, TW;
Tsai Chun Lin, Hsin-Chu, TW;
Tsung-Yi Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second HVW region of a second conductivity type opposite the first conductivity type overlying the substrate and laterally adjoining the first HVW region; a gate dielectric extending from over the first HVW region to over the second HVW region; a gate electrode on the gate dielectric; a drain region in the second HVW region; a source region at an opposite side of the gate dielectric than the drain region; and a deep well region of the first conductivity type underlying the second HVW region. Substantially no deep well region is formed directly underlying the drain region.