The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Jul. 15, 2009
Raghuveer S. Makala, Sunnyvale, CA (US);
Vance Dunton, San Jose, CA (US);
Yoichiro Tanaka, Santa Clara, CA (US);
Steven Maxwell, Sunnyvale, CA (US);
Tong Zhang, Palo Alto, CA (US);
Steven J. Radigan, Fremont, CA (US);
Raghuveer S. Makala, Sunnyvale, CA (US);
Vance Dunton, San Jose, CA (US);
Yoichiro Tanaka, Santa Clara, CA (US);
Steven Maxwell, Sunnyvale, CA (US);
Tong Zhang, Palo Alto, CA (US);
Steven J. Radigan, Fremont, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.