The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7927385 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 19, 2011

Filed:

May. 30, 2008
Applicants:

Dean Skelton, Fitzwilliam, NH (US);

Bernard Jones, Leonding, AT;

Santhana Raghavan Parthasarathy, Nashua, NH (US);

Chandra P. Khattak, Nashua, NH (US);

Inventors:

Dean Skelton, Fitzwilliam, NH (US);

Bernard Jones, Leonding, AT;

Santhana Raghavan Parthasarathy, Nashua, NH (US);

Chandra P. Khattak, Nashua, NH (US);

Assignee:

GT Solar Incorporated, Merrimack, NH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/037 (2006.01); B01D 9/00 (2006.01); C01B 33/021 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for using substantial quantities of silicon powders as charge and processing it to produce a high quality silicon ingots suitable for photovoltaic use is disclosed. In a fused silica crucible, silicon feedstock containing more than about 5% by weight silicon powder is charged. The crucible with the charged silicon feedstock is placed into a furnace chamber and a vacuum is drawn to remove air. The vacuum is applied slowly. Then, the furnace chamber is backfilled with argon gas and heated to form molten silicon. Afterward, the molten silicon is solidified and annealed to form a multicrystalline silicon ingot.


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