The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2011

Filed:

Jun. 18, 2007
Applicants:

Gilad Shomrony, Kfar-Saba, IL;

Arnon Gratch, Tel Aviv, IL;

Shai Silberstein, Rishon-Le-Zion, IL;

Inventors:

Gilad Shomrony, Kfar-Saba, IL;

Arnon Gratch, Tel Aviv, IL;

Shai Silberstein, Rishon-Le-Zion, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01);
U.S. Cl.
CPC ...
Abstract

Inspection of objects, such as semiconductor wafers, can be performed using a diluted scan wherein not all of an inspected area is actually imaged. Instead, a dilution plan can be devised based on the desired amount of area to be skipped and the particular parameters of the inspection, such as the size of each unit area to be imaged or not imaged and the distribution features of the wafer. When the same area is inspected in multiple wafers, the wafers can be inspected in sets using a dilution plan whereby a wafer (or inspected area) can be statistically inspected using diluted scans of the set of wafers. Similarly a die or group of dies of a specified type can be statistically inspected using diluted scans of a set of dies (or group of dies). When statistical inspection is used, the end results of such inspections, such as defect densities and distributions, can be corrected to account for inaccuracies that may be introduced when certain portions are imaged more often than others due to the dilution plan.


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