The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7924405 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 12, 2011

Filed:

Jul. 27, 2007
Applicants:

Lee-chih Yeh, Hsinchu, TW;

Hsin-chang Lee, Hsin-Chu Xian, TW;

Chia-jen Chen, Hsinchu County, TW;

Tzu-yi Wang, Hsinchu, TW;

Inventors:

Lee-Chih Yeh, Hsinchu, TW;

Hsin-Chang Lee, Hsin-Chu Xian, TW;

Chia-Jen Chen, Hsinchu County, TW;

Tzu-Yi Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); G03B 27/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for lithography patterning includes providing a mask for photolithography patterning; measuring a mask flatness of the mask; calculating focal deviation of imaging the mask to a substrate in a lithography apparatus; adjusting the lithography apparatus to have a compensated focal plane of the mask based on the focal deviation; and exposing the semiconductor substrate utilizing the mask and the lithography apparatus with adjusted focal plane.


Find Patent Forward Citations

Yeh, Lee-Chih. (2011). Compensation of reticle flatness on focus deviation in optical lithography (U.S. Patent No. 7924405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7924405

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