The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Mar. 16, 2006
Hong Shen, Camarillo, CA (US);
Ravi Ramanathan, Thousand Oaks, CA (US);
Qiuliang Luo, Moorpark, CA (US);
Robert W Warren, Newport Beach, CA (US);
Usama K Abdali, Aliso Viejo, CA (US);
Hong Shen, Camarillo, CA (US);
Ravi Ramanathan, Thousand Oaks, CA (US);
Qiuliang Luo, Moorpark, CA (US);
Robert W Warren, Newport Beach, CA (US);
Usama K Abdali, Aliso Viejo, CA (US);
Skyworks Solutions, Inc., Woburn, MA (US);
Abstract
A gallium arsenide (GaAs) integrated circuit device is provided. The GaAs circuit device has a GaAs substrate with a copper contact layer for making electrical ground contact with a pad of a target device. Although copper is known to detrimentally affect GaAS devices, the copper contact layer is isolated from the GaAs substrate using a barrier layer. The barrier layer may be, for example, a layer of nickel vanadium (NiV). This nickel vanadium (NiV) barrier protects the gallium arsenide substrate from the diffusion effects of the copper contact layer. An organic solder preservative may coat the exposed copper to reduce oxidation effects. In some cases, a gold or copper seed layer may be deposited on the GaAs substrate prior to depositing the copper contact layer.