The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Jun. 16, 2008
James William Adkisson, Jericho, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
John Joseph Ellis-monaghan, Grand Isle, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles Francis Musante, South Burlington, VT (US);
Richard J. Rassel, Colchester, VT (US);
James William Adkisson, Jericho, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
John Joseph Ellis-Monaghan, Grand Isle, VT (US);
Solomon Mulugeta, Essex Junction, VT (US);
Charles Francis Musante, South Burlington, VT (US);
Richard J. Rassel, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.