The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2011
Filed:
Apr. 10, 2008
Dale C. Jacobson, Salem, NH (US);
Thomas N. Horsky, Boxborough, MA (US);
Wade A. Krull, Marblehead, MA (US);
Karuppanan Sekar, Billerica, MA (US);
Dale C. Jacobson, Salem, NH (US);
Thomas N. Horsky, Boxborough, MA (US);
Wade A. Krull, Marblehead, MA (US);
Karuppanan Sekar, Billerica, MA (US);
SemEquip, Inc., North Billerica, MA (US);
Abstract
A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions. These compounds include co-implants of carbon clusters with implants of monomer or cluster dopants or simply implanting cluster dopants. In particular, the invention described herein consists of a method of implanting semiconductor wafers implanting semiconductor wafers with carbon clusters followed by implants of boron, phosphorus, or arsenic, or followed with implants of dopant clusters of boron, phosphorus, or arsenic.