The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Nov. 02, 2005
Yoshihiro Sato, Amagasaki, JP;
Tomoe Nakayama, Toyonaka, JP;
Hiroshi Kobayashi, Nirasaki, JP;
Yoshinori Osaki, Nirasaki, JP;
Tetsuro Takahashi, Nirasaki, JP;
Yoshihiro Sato, Amagasaki, JP;
Tomoe Nakayama, Toyonaka, JP;
Hiroshi Kobayashi, Nirasaki, JP;
Yoshinori Osaki, Nirasaki, JP;
Tetsuro Takahashi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.