The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
Apr. 29, 2009
Matt Yeh, Hsinchun, TW;
Shun Wu Lin, Taichung, TW;
Chung-ming Wang, Chiayi, TW;
Chi-chun Chen, Kaohsiung, TW;
Matt Yeh, Hsinchun, TW;
Shun Wu Lin, Taichung, TW;
Chung-Ming Wang, Chiayi, TW;
Chi-Chun Chen, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method for fabricating a semiconductor device. The method includes forming first, second, third, and fourth gate structures on a semiconductor substrate, each gate structure having a dummy gate, removing the dummy gate from the first, second, third, and fourth gate structures, thereby forming first, second, third, and fourth trenches, respectively, forming a metal layer to partially fill in the first, second, third, and fourth trenches, forming a first photoresist layer over the first, second, and third trenches, etching a portion of the metal layer in the fourth trench, removing the first photoresist layer, forming a second photoresist layer over the second and third trenches, etching the metal layer in the first trench and the remaining portion of the metal layer in the fourth trench, and removing the second photoresist layer.