The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2011

Filed:

Oct. 08, 2009
Applicants:

Yoshimi Takahashi, Beppu, JP;

Masood Murtuza, Sugarland, TX (US);

Rajiv Dunne, Murphy, TX (US);

Satyendra Chauhan, Sugarland, TX (US);

Inventors:

Yoshimi Takahashi, Beppu, JP;

Masood Murtuza, Sugarland, TX (US);

Rajiv Dunne, Murphy, TX (US);

Satyendra Chauhan, Sugarland, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/98 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for bonding IC die to TSV wafers includes bonding at least one singulated IC die to respective ones of a plurality of IC die on a TSV wafer that includes a top semiconductor surface and TSV precursors including embedded TSV tips to form a die-wafer stack. The die-wafer stack is thinned beginning from the bottom surface of the TSV wafer to form a thinned die-wafer stack. The thinning includes exposing the embedded TSV tips to provide electrical access thereto from the bottom surface of the TSV wafer. The thinned die-wafer stack can be singulated to form a plurality of thinned die stacks.


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