The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Sep. 08, 2009
Dieter Kraus, Oberkochen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Thomas Stein, Oberkochen, DE;
Harald Woelfle, Freiburg, DE;
Stefan-wolfgang Schmidt, Aalen, DE;
Dieter Kraus, Oberkochen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Thomas Stein, Oberkochen, DE;
Harald Woelfle, Freiburg, DE;
Stefan-Wolfgang Schmidt, Aalen, DE;
Carl Zeiss Smt AG, Oberkochen, DE;
Abstract
Components () in the interior of an EUV lithography device for extreme ultraviolet and soft X-ray wavelength range are cleaned by igniting a plasma, adjacent to the component () to be cleaned, using electrodes (), wherein the electrodes () are adapted to the form of the component () to be cleaned. The residual gas atmosphere is measured spectroscopically on the basis of the plasma. An emission spectrum is preferably recorded in order to monitor the degree of cleaning. An optical fiber cable () with a coupling-in optical unit () is advantageously used for this purpose. Moreover, in order to monitor the contamination in the gas phase within the vacuum chambers during the operation of an EUV lithography device, it is proposed to provide modules configured to initiate a gas discharge and to detect radiation emitted on account of the gas discharge. The contamination in the gas phase can be deduced from the analysis of the measured spectrum.