The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jan. 11, 2008
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Thomas F. Houghton, Marlboro, NY (US);
Emily Kinser, Poughkeepsie, NY (US);
Darryl D. Restaino, Modena, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Thomas F. Houghton, Marlboro, NY (US);
Emily Kinser, Poughkeepsie, NY (US);
Darryl D. Restaino, Modena, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer on a top surface and a top side beveled edge proximate to the top surface of a substrate; removing or preventing formation of a carbon-rich layer on a bottom side bevel edge region proximate to a bottom surface of the substrate or converting the carbon-rich layer to nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide; and forming the TEOS oxide layer on the top surface, the top side beveled edge and the bottom side bevel edge region of the substrate.