The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Jul. 14, 2008
Jeff J. Xu, Jhubei, TW;
Chia-ta Hsieh, Tainan, TW;
Chun-pei Wu, Nantou County, TW;
Chun-hung Lee, Hsinchu County, TW;
Jeff J. Xu, Jhubei, TW;
Chia-Ta Hsieh, Tainan, TW;
Chun-Pei Wu, Nantou County, TW;
Chun-Hung Lee, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of manufacturing a microelectronic device. The method includes forming recessed shallow trench isolation (STI) features in a semiconductor substrate, defining a semiconductor region between adjacent two of the recessed STI features; forming a tunnel dielectric feature within the semiconductor region; forming a nitride layer on the recessed STI features and the tunnel dielectric feature; etching the nitride layer to form nitride openings within the recessed STI features; partially removing the recessed STI features through the nitride openings, resulting in gaps between the nitride layer and the recessed STI features; and forming a first dielectric material on surfaces of the nitride layer, sealing the nitride openings.