The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Mar. 26, 2004
Seshadri Ganguli, Sunnyvale, CA (US);
Kavita Shah, Mountain View, CA (US);
Nirmaya Maity, Los Altos, CA (US);
Mei Chang, Saratoga, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Kavita Shah, Mountain View, CA (US);
Nirmaya Maity, Los Altos, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The invention generally provides a method of forming a film on a substrate surface including positioning a substrate within a process chamber, exposing a ruthenium-containing compound to the substrate surface, purging the process chamber with a purge gas, reducing the ruthenium-containing compound with a reductant to form a ruthenium layer on the substrate surface and purging the process chamber with the purge gas. The ruthenium-containing compound is selected from the group consisting of bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, and combinations thereof.