The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Jan. 31, 2007
Sakae Koyata, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sakae Koyata, Tokyo, JP;
Tomohiro Hashii, Tokyo, JP;
Katsuhiko Murayama, Tokyo, JP;
Kazushige Takaishi, Tokyo, JP;
Takeo Katoh, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer. The singe wafer etching apparatus includes a plurality of supply nozzlescapable of discharging the etching solutionfrom discharge openingsonto the front surface of the wafer, nozzle-moving devices each capable of independently moving the plurality of supply nozzles, and an etching solution supplying devicefor supplying the etching solutionto each of the plurality of supply nozzles and discharging the etching solutionfrom each of the discharge openings to the front surface of the wafer