The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Sep. 09, 2005
Hiroji Aga, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Masayuki Imai, Annaka, JP;
Tatsuo Enomoto, Annaka, JP;
Hiroshi Takeno, Annaka, JP;
Hiroji Aga, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Masayuki Imai, Annaka, JP;
Tatsuo Enomoto, Annaka, JP;
Hiroshi Takeno, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index nof SiOas 1.5, refractive index nof Si as 3.5, and optical thickness tof the silicon oxide filmand the SOI layerin the infrared wavelength region as t=n×t+n×t, the thickness tof the silicon oxide filmand thickness tof the SOI layer so as to satisfy a relation of 0.1λ<t<2λ, and so as to make (tn)/(t×n) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×10/cm. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.