The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Jul. 26, 2007
Darrell Rinerson, Cupertino, CA (US);
Jonathan Bornstein, Cupertino, CA (US);
Robin Cheung, Cupertino, CA (US);
David Hansen, Palo Alto, CA (US);
Travis Byonghyop OH, San Jose, CA (US);
Darrell Rinerson, Cupertino, CA (US);
Jonathan Bornstein, Cupertino, CA (US);
Robin Cheung, Cupertino, CA (US);
David Hansen, Palo Alto, CA (US);
Travis Byonghyop Oh, San Jose, CA (US);
Abstract
A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper.