The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2011

Filed:

Mar. 19, 2008
Applicants:

Kunal R. Parekh, Boise, ID (US);

Suraj Mathew, Boise, ID (US);

Jigish D. Trivedi, Boise, ID (US);

John K. Zahurak, Boise, ID (US);

Sanh D. Tang, Boise, ID (US);

Inventors:

Kunal R. Parekh, Boise, ID (US);

Suraj Mathew, Boise, ID (US);

Jigish D. Trivedi, Boise, ID (US);

John K. Zahurak, Boise, ID (US);

Sanh D. Tang, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the recessed access device trenches are adjacent one another. Electrically conductive material is formed within the recessed access device trenches, and source/drain regions are formed proximate the electrically conductive material. The electrically conductive material and source/drain regions together are incorporated into a pair of adjacent recessed access devices. After the recessed access device trenches are formed within the substrate, an isolation region trench is formed between the adjacent recessed access devices and filled with electrically insulative material to form a trenched isolation region.


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