The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Dec. 16, 2008
Xiying Chen, San Jose, CA (US);
Deepak Chandra Sekar, Sunnyvale, CA (US);
Mark Clark, Santa Clara, CA (US);
Dat Nguyen, San Jose, CA (US);
Tanmay Kumar, Pleasanton, CA (US);
Xiying Chen, San Jose, CA (US);
Deepak Chandra Sekar, Sunnyvale, CA (US);
Mark Clark, Santa Clara, CA (US);
Dat Nguyen, San Jose, CA (US);
Tanmay Kumar, Pleasanton, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. The diode is a metal-insulator diode having a first metal layer, a first insulating layer, a second insulating layer and a second metal layer. At least one asymmetric interface state is provided at the intersection of at least two of the layers to increase the ratio of the diode's on-current to its reverse bias leakage current. In various examples, the asymmetric interface state is formed by a positive or negative sheet charge that alters the barrier height and/or electric field at one or more portions of the diode. Two-terminal devices such as passive element memory cells can utilize the diode as a steering element in series with a state change element. The devices can be formed using pillar structures at the intersections of upper and lower conductors.