The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Apr. 25, 2007
Jun Hayakawa, Sendai, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Young Min Lee, Sendai, JP;
Jun Hayakawa, Sendai, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Young Min Lee, Sendai, JP;
Hitachi, Ltd., Tokyo, JP;
Tohoku University, Miyagi, JP;
Abstract
Provided is a high-speed, super-low-power-consumption nonvolatile memory with a high thermal stability. A nonvolatile magnetic memory is equipped with high-output tunnel magnetic resistance devices to each of which a free layer with a high thermal stability is applied, while a writing method by spin transfer torque is applied to the memory. The tunnel magnetic resistance device has a free layer including a first ferromagnetic film and the second ferromagnetic film each of which has a body center cubic structure and each of which contains Co, Fe and B. The free layer, additionally, includes a first non-magnetic layer. The tunnel magnetic resistance device has a layered structure formed of the free layer and a pinned layer with a MgO insulating film with a (100) orientation rock-salt structure interposed in between.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile