The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Aug. 21, 2006
Jeffrey A. Rzepiela, Sunnyvale, CA (US);
Yiping Feng, Cupertino, CA (US);
Shiyou Pei, Saratoga, CA (US);
Alexander Kagan, San Jose, CA (US);
Jianou Shi, Milpitas, CA (US);
Sergio Edelstein, Los Gatos, CA (US);
Jeffrey A. Rzepiela, Sunnyvale, CA (US);
Yiping Feng, Cupertino, CA (US);
Shiyou Pei, Saratoga, CA (US);
Alexander Kagan, San Jose, CA (US);
Jianou Shi, Milpitas, CA (US);
Sergio Edelstein, Los Gatos, CA (US);
KLA-Tencor Technologies Corp., Milpitas, CA (US);
Abstract
Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.