The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2011
Filed:
Oct. 31, 2007
Mitsuo Tokuda, Tachikawa, JP;
Muneyuki Fukuda, Kokubunji, JP;
Yasuhiro Mitsui, Fuchu, JP;
Hidemi Koike, Hitachinaka, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Hiroyasu Shichi, Nishitokyo, JP;
Hideo Kashima, Tokyo, JP;
Kaoru Umemura, Tokyo, JP;
Mitsuo Tokuda, Tachikawa, JP;
Muneyuki Fukuda, Kokubunji, JP;
Yasuhiro Mitsui, Fuchu, JP;
Hidemi Koike, Hitachinaka, JP;
Satoshi Tomimatsu, Kokubunji, JP;
Hiroyasu Shichi, Nishitokyo, JP;
Hideo Kashima, Tokyo, JP;
Kaoru Umemura, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.