The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2011

Filed:

Sep. 18, 2007
Applicants:

Richard E. Fackenthal, Carmichael, CA (US);

Ferdinando Bedeschi, Milan, IT;

Meenatchi Jagasivamani, Fairfield, CA (US);

Ravi Annavajjhala, Folsom, CA (US);

Enzo M. Donze, Agrate Brianza, IT;

Inventors:

Richard E. Fackenthal, Carmichael, CA (US);

Ferdinando Bedeschi, Milan, IT;

Meenatchi Jagasivamani, Fairfield, CA (US);

Ravi Annavajjhala, Folsom, CA (US);

Enzo M. Donze, Agrate Brianza, IT;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.


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