The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Mar. 24, 2009
Masatoshi Fukuda, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Tomonari Yamamoto, Jhubei, TW;
Masatoshi Fukuda, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Katsuaki Ookoshi, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Tomonari Yamamoto, Jhubei, TW;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.