The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Mar. 31, 2008
Lee Chen, Cedar Creek, TX (US);
Lin Xu, Houston, TX (US);
Ronald Victor Bravenec, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile