The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Oct. 24, 2007
Muneyuki Fukuda, Kokubunji, JP;
Tomoyasu Shojo, Kokubunji, JP;
Mitsugu Sato, Hitachinaka, JP;
Atsuko Fukada, Kokubunji, JP;
Naomasa Suzuki, Hitachinaka, JP;
Ichiro Tachibana, Hitachinaka, JP;
Muneyuki Fukuda, Kokubunji, JP;
Tomoyasu Shojo, Kokubunji, JP;
Mitsugu Sato, Hitachinaka, JP;
Atsuko Fukada, Kokubunji, JP;
Naomasa Suzuki, Hitachinaka, JP;
Ichiro Tachibana, Hitachinaka, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like. Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.