The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Sep. 30, 2009
Taewoo Kang, Kyoung-gi-Do, KR;
Yorim Lee, Kyoung-gi-Do, KR;
Taekeun Lee, Kyoung-gi-Do, KR;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor device is made by disposing a film layer over a substrate having first conductive layer. An opening is formed in the film layer to expose the first conductive layer. A second conductive layer is formed over the first conductive layer. A first bump is formed over the second conductive layer which promotes reflow of the first bump at a eutectic temperature. A standoff bump is formed on the film layer around a perimeter of the substrate. The film layer prevents reflow of the standoff bump at the eutectic temperature. A second bump is disposed between a semiconductor die and the first bump. The second bump is reflowed to electrically connect the semiconductor die to the first bump. After reflow of the second bump, the standoff bump has a height at least 70% of the second bump prior to reflow to maintain separation between the semiconductor die and substrate.