The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Mar. 19, 2007
Fumitaka Kume, Annaka, JP;
Masayuki Shinohara, Annaka, JP;
Fumitaka Kume, Annaka, JP;
Masayuki Shinohara, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer sectioncomposed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrateby Metal Organic Vapor Phase Epitaxy, and a Hydride Vapor Phase Epitaxial Growth step of growing a current spreading layeron the light emitting layer sectionepitaxially by Hydride Vapor Phase Epitaxial Growth Method, are conducted in this order. Then, the current spreading layeris grown, having a low-rate growth layerpositioned close to the light emitting layer side and then a high-rate growth layerhaving a growth rate of the low-rate growth layerlower than that of the high-rate growth layerso as to provide a method of fabricating a light emitting device capable of preventing hillock occurrence while forming the thick current spreading layer.