The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Oct. 10, 2008
Tinggang Zhu, Somerset, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Marek K. Pabisz, Quakertown, PA (US);
Mark Gottfried, Hillsborough, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Milan Pophristic, Princeton, NJ (US);
Michael Murphy, Somerset, NJ (US);
Richard A. Stall, Belle Mead, NJ (US);
TingGang Zhu, Somerset, NJ (US);
Bryan S. Shelton, Bound Brook, NJ (US);
Marek K. Pabisz, Quakertown, PA (US);
Mark Gottfried, Hillsborough, NJ (US);
Linlin Liu, Hillsborough, NJ (US);
Milan Pophristic, Princeton, NJ (US);
Michael Murphy, Somerset, NJ (US);
Richard A. Stall, Belle Mead, NJ (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.