The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

Mar. 29, 2007
Applicants:

Saurabh Lodha, Hillsboro, OR (US);

Pushkar Ranade, Hillsboro, OR (US);

Christopher Auth, Portland, OR (US);

Inventors:

Saurabh Lodha, Hillsboro, OR (US);

Pushkar Ranade, Hillsboro, OR (US);

Christopher Auth, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01R 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and associated structures of forming a microelectronic device are described. Those methods may include amorphizing at least one contact area of a source/drain region of a transistor structure by implanting through at least one contact opening, forming a first layer of metal on the at least one contact area, forming a second layer of metal on the first layer of metal, selectively etching a portion of the second metal layer, annealing the at least one contact area to form at least one silicide, and removing the unreacted first metal layer and second metal layer from the transistor structure and forming a conductive material in the at least one contact opening.


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