The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Mar. 14, 2007
Hiroyuki Fujimoto, Tokyo, JP;
Yasuhiko Ueda, Tokyo, JP;
Fumiki Aiso, Tokyo, JP;
Yuki Koga, Tokyo, JP;
Hiroyuki Fujimoto, Tokyo, JP;
Yasuhiko Ueda, Tokyo, JP;
Fumiki Aiso, Tokyo, JP;
Yuki Koga, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
In a method of manufacturing a semiconductor device, a trench is formed to have an upper quadrangular section and a lower circular section which is formed through a hydrogen annealing process, to extend in a depth direction of a semiconductor substrate. An insulating film is formed on a surface of the trench and a surface of the semiconductor substrate. A conductive film is formed to fill the trench whose surface is covered with the an insulating film. Source/drain regions are formed on both sides of the trench.