The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Aug. 14, 2008
Huilong Zhu, Poughkeepsie, NY (US);
Babar A. Khan, Ossining, NY (US);
Xi LI, Somers, NY (US);
Joyce C. Liu, Carmel, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Babar A. Khan, Ossining, NY (US);
Xi Li, Somers, NY (US);
Joyce C. Liu, Carmel, NY (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A deep trench (DT) capacitor comprises a trench in a silicon layer, a buried plate surrounding the trench, a dielectric layer lining the trench, and a node conductor in the trench. The top surface of the poly node is higher than the surface of the silicon layer, so that it is high enough to ensure that a nitride liner used as a CMP etch stop for STI oxide surrounding a top portion of the poly node will be higher than the STI oxide, so that the nitride liner can be removed prior to forming a silicide contact on top of the poly node.