The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Apr. 05, 2007
Applicants:

Nigel P. Hacker, Palo Alto, CA (US);

Michael Thomas, Milpitas, CA (US);

James S. Drage, Fremont, CA (US);

Inventors:

Nigel P. Hacker, Palo Alto, CA (US);

Michael Thomas, Milpitas, CA (US);

James S. Drage, Fremont, CA (US);

Assignee:

Honeywell International Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
Abstract

Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.


Find Patent Forward Citations

Hacker, Nigel. (2010). Method to restore hydrophobicity in dielectric films and materials (U.S. Patent No. 7858294). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7858294

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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